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Featured product
Infineon‘s CoolGaN™ 600 V e-mode HEMTs
Infineon’s family of CoolGaN™ devices is based on the gallium nitride-on-silicon (GaN-on-Si) technology. These products when paired with the dedicated GaN EiceDRIVER™ ICs, significantly increase efficiencies in power conversion, improve power density, reduce OPEX, CAPEX, BOM and overall costs.

Key features:

Best FOM of 600 V power devices
Excellent for hard- and soft-switching topologies as well as high-frequency and high-power-density applications
Optimized for turn-on and turn-off
Zero reverse-recovery charge