Munich
Bavaria
80538
Germany
Because of the need to be able to produce increasingly purer layers of monocrystalline compound semiconductors and structures with abrupt interfaces, molecular beam epitaxy (MBE) was developed in the early 1970s. Since then, MBE systems have become a mature production method in mass production, mainly in the field of optoelectronics (eg laser products) and high frequency electronics (eg HEMTs). MBE R & D systems are used in the development of electronic and optoelectronic devices as well as magnetic superlattices, photovoltaic structures, new oxide layers for high-k materials and in many other research fields.
MBE effusion cell technology, originally developed for molecular beam epitaxy, has also become an important technology in today’s industrial production with applications eg in the photovoltaic industry (large selenium cells, InS cells and other materials) and the OLED display industry (RIBER already has many hundreds sources for OLED applications supplied).
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